Abstract
New epitaxial oxide thin film structures are proposed Cor future oxide electronics, particularly tor ferroelectric random access memory (FeRAM) with oxide electrodes drawing on silicon-on-insulator (SOI) and high- T c superconductor technology. These structures have a benefical effect in device scaling and ferroelectric size effect and can he a starting point for future oxide electronics, such as high- T c. superconducting, ferroelectric, piezoelectric and optical devices. In addition, several candidates for electrodes are discussed, considering the recent research on conductive perovskite, including high- T c. superconductors. The basic thin film structure is epitaxially grown Ferroelectric ABO 3/CeO 2 or MgAl 2O 4/Si. As ideal structures, we propose four kinds of thin film structures based on a-axis oriented Bi layer-structured ferroelectric thin film and ferroelectric artificial superlattice and an idea for a superconductor-normal metal-superconductor (SNS) device with conductive perovskite superlattice. Besides FeRAM, these oxide multilayers fabricated on Si can be also applied to high- T c. superconducting devices, optoelectronic devices, infrared (1R) pyro-sensors and surface acoustic wave (SAW) devices.
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