Abstract
Motivated by the need for new red phosphors for solid-state lighting applications Eu 3+-doped MgMoO 4 was prepared by solid-state reaction and its excitation and emission spectra were measured at room temperature. In addition, the effects of firing temperature and Eu 3+ doping concentration on the PL intensities were also investigated. Compared with Y 2O 2S:0.05Eu 3+, the obtained Mg 0.80MoO 4:Eu 3+ 0.20 phosphor shows a stronger excitation band near 400 nm and intensely red-emission lines at 616 nm correspond to the forced electric dipole 5 D 0 → 7 F 2 transitions on Eu 3+ under 394 nm light excitation. The CIE chromaticity coordinates ( x = 0.651, y = 0.348) of Mg 0.80MoO 4:Eu 3+ 0.20 close to the NTSC (National Television Standard Committee) standard values, and therefore may find application on near UV InGaN chip-based white light emitting diodes.
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