A programmable multi-state logic-in-memory in a single unit based on spin–orbit torque

Abstract

Spintronic device based on spin–orbit torque (SOT) is a potential candidate for the next-generation memory and logic devices. Here, we report a SOT-based programmable multi-state logic-in-memory in a single unit. Multi-step magnetization switching behaviors can be achieved in the device with a stacking structure based on Pt/Co bilayers and an Al2O3 spacer layer by varying the thickness of Co and Pt layers. Moreover, five logic gates (NOR, OR, AND, NAND, and NOT) have also been realized by controlling the current and magnetic field. This multi-state logic-in-memory opens a simple and effective way for designing single-unit spintronic devices and extends the potential application of the SOT-based devices in brain-like computations.