A procedure for the extraction of a nonlinear microwave GaN FET model

Abstract

SummaryIn this paper, we describe an extraction procedure of nonlinear models for microwave field‐effect transistor (FET). We use a nonlinear model available in commercial CAD tools, and we extract the parameters by combining direct extraction and numerical optimization. We determine a first estimate of the model parameters by few DC and S‐parameter measurements. Next, we refine the parameters by optimization against low‐frequency and high‐frequency vector‐calibrated large‐signal measurements gathered with a Large‐Signal‐Network Analyzer (LSNA). As case study we consider a 0.25 × 200 µm2 GaN FET on SiC for power amplifier applications. Ultimately, we want to show that a good accuracy level can be achieved while minimizing the extraction effort and that an accurate model can be built and suitably tailored depending on the final application. Copyright © 2016 John Wiley & Sons, Ltd.