Abstract
A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO₂/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ~6.6 × 0.58 × 0.28 µm(3) (~10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 µW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.
Highlights
Having been employed to implement a reliable light source in various optical devices over the past few decades, III-V semiconductors are proven to be a versatile platform for industrial applications such as VCSEL telecommunications or optical interconnects
Combining them with silicon (Si) photonics that inherit the maturity of complementary metal–oxide–semiconductor (CMOS) processing technologies, one could pave the way for realizing low-cost next-generation photonic integrated circuits (PICs) [1,2,3,4]
To accommodate all these requirements, photonic crystal (PC) laser has been widely studied as a promising candidate because of its remarkable properties such as compact-size and low-threshold [5,6,7,8], and its ability to operate as a CW laser [9,10,11]
Summary
Having been employed to implement a reliable light source in various optical devices over the past few decades, III-V semiconductors are proven to be a versatile platform for industrial applications such as VCSEL telecommunications or optical interconnects. The CW operation of III-V QWs PC laser on a Si substrate at room temperature was first reported by Vecchi et al [13] using 2D band-edge honeycomb lattice configuration In this case, the InGaAs/InP material is bonded onto the Si substrate by using metallic dry bonding method with SiO2 as a cladding layer. With a help of micron-sized polydimethylsiloxane (PDMS) stamp developed by soft-lithography (the ratio of curing agent to base was 0.1), the nanobeam was selectively released from its parent chip and directly printed on a foreign substrate (SiO2/Si substrate) By using this method, complex fabrication processes generally involved in the wafer bonding schemes could be significantly simplified. To the best of our knowledge, this is the first demonstration of room temperature CW operation of printed nanobeam laser working near 1550 nm
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
