Abstract
It has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these defects is about the same as the time scale of transient enhanced diffusion (TED) leads to the conclusion that {311} defects are a primary source of interstitials under TED conditions. We describe a comprehensive model which accounts for the evolution of these defects during ion implant annealing, and in combination with point defect parameters from previous work also correctly predicts TED behavior.
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