TED model including the dissolution of extended defects

Abstract

The requirement for the formation of the shallow junction has arisen as device dimensions shrink into the submicron regime. The shallow junctions are generally formed by low-energy ion implantation followed by low thermal-budget processing. However, simulations of dopant diffusion during the thermal processing have not been very successful, mainly due to the transient enhanced diffusion (TED). TED continues until the concentrations of the point defects, interstitial silicon, and vacancies become almost their thermal equilibrium values. For accurate simulation of TED, the effect of the extended defect dissolution cannot be neglected. In this work, we propose a new TED model which includes the extended defect dissolution.