Abstract
In this paper, a practical approach to model metal-insulator-semiconductor (MIS) interconnects is presented, with focus on the microstrip configuration. Starting from a one-dimensional (1-D) electromagnetic field analysis, we first extend the validity range of some closed-form expressions from 1-D to two-dimensional (2-D) and present an original RLCG-B model with five equivalent circuit parameters. These parameters, which depend on two effective widths of the physical metal strip, can be frequency dependent because of the skin effect and the dielectric losses. The original RLCG-B model is then modified and implemented with seven frequency-independent circuit parameters. These parameters are computed by analytical equations. Numerical simulations are used to validate the original and modified RLCG-B models. A formula to allow comparison of various interconnect models in the time domain is proposed. Comparisons based on this formula are presented for a single transmission line with source resistance, R/sub S/, and load capacitance, C/sub L/. Such comparisons are more meaningful in VLSI applications than comparisons of characteristics derived from swept-frequency per-unit-length parameters.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
