Abstract
Power metal-insulator-silicon-switch (MISS) devices fabricated using semi-insulating polysilicon (SIPOS) for the insulator layer are discussed. The SIPOS MISS devices have an active area of 4.5 mm/sup 2/ and can carry in excess of 8 A. The typical switching voltage of these devices is 20 to 25 V with a negative temperature coefficient. They have a typical switching time of 200 ns and a very fast turn-off time. No degradation in device performance is observed after high current pulsing. Power SIPOS MISS devices offer an alternative to conventional four-layer switching devices, yielding faster switching characteristics while maintaining process compatibility.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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