Abstract
The paper introduces a new type of power semiconductor device—a power semiconductor diode with an integrated reverse voltage sensor. An integrated resistor was obtained, exhibiting a variation by a factor of almost 4 (600–2200 Ω at 25°C) when reverse voltage increased from 0 to 2400 V. The theoretical model proposed fits with the experimental results within 10%. The practical conditions in which the studied reverse voltage sensor can be used are also discussed.
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