Abstract
A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal-oxide-semiconductor (CMOS) process is presented. A LC connected dual-resonant network is proposed to achieve good broadband performance and high out-band rejection capability simultaneously. Furthermore, the advanced multiple-gated transistor technique is employed to cancel out odd-order intermodulation and harmonic distortions. The PA is implemented in 130 nm CMOS process with an area of 1.17 mm × 0.92 mm. Measurement results demonstrate that the PA exhibits a peak power gain of 8 dB with a relative bandwidth of 38% while maintaining a low reflection coefficient of −23.2 dB, maximum saturation output power of 15.6 dBm, maximum OP1dB and OIP3 of 14.3 dBm and 19 dBm, and a peak power added efficiency of 21.3%, respectively. In addition, an out-band rejection of 20 dB and 23.2 dB at 6.1 GHz and 14 GHz are measured.
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