Abstract
Positron lifetime measurements in neutron-irradiated Cz silicon crystals have been performed at room temperature after annealing at different temperatures between 100°C and 800°C. Two-component fitting of the positron lifetime spectra was carried out. It is suggested that the short lifetime component is a weighted average lifetime of the positrons in the bulk and those trapped at monovacancy-substitutional oxygen complexes, while the long lifetime component is an average lifetime of the positrons trapped at divacancies or divacancy-substitutional oxygen complexes and those trapped at quadrivacancy-substitutional oxygen complexes. The two-component data are analyzed using an extension of the trapping model to obtain the positron trapping rates at these vacancy-type defects. The annealing of these defects is discussed.
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