Abstract
The infiltration of iron oxide nanoparticles into mesoporous silicon is performed to investigate the influence of different arrangements of the particles on the magnetic behaviour of the achieved nanocomposite consisting of a semiconductor and a magnetic material. The porous silicon is fabricated from a highly doped n-type silicon wafer by anodization. The Fe3O4 particles fabricated by high temperature decomposition offer a size of 5 and 8 nm, respectively. In the present work the influence of the porous silicon matrix on the magnetic behaviour of such hybrid materials is figured out. In general iron oxide particles of a few nanometer in size are superparamagnetic but due to dipolar coupling between them the blocking temperature can be shifted, which is demonstrated by modification of the particle size and the distance between the particles.
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