Abstract
Point-contact diodes suitable for the harmonic generation of millimeter and sub-millimeter wave frequencies from 8–12 mm fundamental sources have been fabricated. The diodes were made by establishing a point contact to the surface of silicon into which a shallow diffusion had produced a p- n junction about 0·1–0·2 μ below the surface. When used as harmonic generators at frequencies to 365 Gc/s, the 15th harmonic of K-band, the performance of these diodes was found to approximate that obtained with the widely used point-contact diodes made on silicon prepared by the more complicated and difficult ion-bombardment techniques of R.S. Ohl. A simple process for the preparation of the requisite thin diffused surface layer is described.
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