A plasma immersion implantation system for materials modification

Abstract

A plasma immersion ion implantation (PIII) system is described which provides the capability to bridge the range between research exploration and commercial applications for materials modification of electronic materials, with a particular focus on layer transfer processes. The Silicon Genesis PIII system is capable of operation at high plasma densities (≈5×10 11 ions/cm 3 at the wafer) with high purity, mono-species ionization (>99% H + ions with a hydrogen plasma). The first generation of Silicon Genesis PIII systems is equipped to use 200-mm wafers (through an automated loadlock) and pulsed potentials up to 50 kV. Use of the mono-species ionization characteristic of the Silicon Genesis PIII system provides the capability to precisely vary the characteristics of surface layers through implantation of atoms and damage creation at well-controlled depths in the materials of choice. The Silicon Genesis PIII system is designed for efficient production of SOI and other layer transfer-generated materials and can be adapted for materials modification of more complex structures and work pieces.