Doping concentration evaluation using plasma propagation models in plasma immersion ion implantation (PIII) system

Abstract

Plasma immersion ion implantation (PIII) is a high dose-rate implantation process technique in the area of semiconductor device fabrication used to fabricate various device structures like shallow junction, silicon on insulators and in the processing of flat panel display materials, trench doping, etc. The basic mechanism of ions source and their acceleration in PIII technique is different from that of the conventional ion-implantation. In this, the target is immersed in a plasma source and the implantation is done by accelerating the ions with a negative pulse bias voltage, applied to the target. The dynamics of ion transport and the implantation is different from line-of-sight implantation. In this paper, the doping of individual ions (Ar, He and N), in a collisionless PIII system is studied analytically when a negative pulse of 10 kV is applied to the target. The net ion doping concentration in one pulse duration has also been computed during the propagation of plasma sheaths.