Abstract
AbstractThe growth of a‐plane (11‐20) AlN and AlGaN on r‐plane (1‐102) sapphire has been investigated with the aim of application to LEDs and LDs in the deep ultra‐violet region. a‐plane AlN and AlGaN were grown on r‐plane sapphire by low‐pressure metalorganic vapor phase epitaxy (LP‐MOVPE). The crystalline quality and surface morphology of a‐plane AlN were optimized at a growth temperature of 1250 °C with the off‐angle of r‐plane sapphire between ‐1° and +1°, and a‐plane AlGaN grown on the AlN layer using ‐0.45°‐off r‐plane sapphire as a substrate exhibited high crystalline quality. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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