Abstract
This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high / on off I I ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold voltage, and drain threshold voltage of the proposed device. The results of derived model are compared with that of simulated results to examine the validity of model of electrical parameters and also comparison of the analytical model results with simulated results shows excellent agreement. General Terms Modeling, simulation.
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