Abstract
A modeling method for terahertz Schottky diode is proposed based on the special physical effects of Schottky diode in the terahertz frequency band. In this method, the device is split into a nonlinear Schottky junction part and a linear parasitic part, which are modeled separately. The nonlinear part uses the physical based modeling method by analyzing the special nonlinear effects generated by the device in the terahertz band, focusing on the modeling of the current saturation effect, and then extracting the intrinsic parameters according to the established model; for the linear part of the diode, its 3D electromagnetic (EM) model is built in the EM field simulation software to extract the parasitic parameters of the diode. Finally, the model is implemented using the circuit simulator HSpice. The model is verified by comparing the parameters extracted from the model with the actual device electrical parameters. This method ensures accuracy and convenience at the same time.
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