Abstract
This article presents a physics-based varactor-diode model for exponentially graded doping profiles. The capacitance-voltage characteristic and the bias dependence of the series resistance are discussed in detail. The model is validated by frequency and time domain measurements on GaAs varactors. The optimum design for nonlinear transmission () line NLTL applications is discussed. Q 1997 John Wiley & Sons, Inc. Int J Microwa'e Millimeter-Wa'e CAE 7: 278-288, 1997.
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