A Physics-Based Model and Its Solution Methodology for Hysteresis Mobile-Ionic Dielectrics

Abstract

A physics-based model and its corresponding solution methodology for the mobile-ionic (MI) dielectrics exhibiting Q-V(Charge-Voltage) hysteresis behaviors are proposed based on ion drift-diffusion (IDD) equations coupling with Poisson’s equation. The proposed model captures the dynamic distribution of mobile ions’ concentrations within dielectric along the external electric field. The accuracy of the proposed model is validated by comparing the computed results with the experimental ones. Moreover, to investigate the synaptic characters of mobile-ionic field-effect transistors (MIFETs), numerical model based on coupled non-equilibrium Green’s function (NEGF), IDD and Poisson’s equations is also established. Potentiation and depression properties of MIFET are decently reproduced with the proposed model, which are consistent with the experiment results.