Abstract
In this paper, we present a compact surface-potential-based drain current model in molybdenum disulfide (MoS2) field-effect transistors (FETs). Considering variable range hopping (VRH) transport via band-tail states in MoS2 transistors, an explicit solution for surface potential has been derived and it provides a good description over different regions of operation by comparisons with numerical data. Based on the charge-sheet model (CSM), which applies to drift-diffusion transport, the current expression including contact resistance and velocity saturation effect is developed. Furthermore, the presented model is validated and shows a good agreement with the experimental data for MoS2 FETs.
Published Version
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