Abstract
A physics-based compact model for retention behaviors of conductive-bridge random access memory (CBRAM) is developed by modeling: 1) the material-dependent metal atom transport from the conductive filament into the electrolyte; and 2) the conduction percolation controlled by the atom concentration. Considering the material properties of the metal and electrolyte, this compact model can well reproduce the retention behaviors of the CBRAM in both low resistance state and high resistance state (HRS) for various material stacks under various operating temperatures. Two types of HRS resistance shift can be reproduced by accurately modeling the percolation paths. The compact model can enable the reliability projection of cells in a crossbar array.
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