Abstract
The physical mechanisms which are involved in the hot carrier degradation of dynamically operated MOSFETs are analyzed by means of a novel approach to the charge pumping technique, and compared to the mechanisms which take place during conventional static stress experiments. The proposed techniqeu allows the physical characterization of the silicon/oxide interface properties, where both interface state generation and charge trapping phenomena are observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
