Abstract

The ability to define, or recognise particular regions of interest or surface features is vital to the analysis and interpretation of spatially-resolved images collected with a nuclear microprobe. However, good topographic image contrast is difficult to accomplish using PIXE or RBS images due to their inherent insensitivity to topography, lack of elemental variation or poor statistics. Topographic image contrast is commonly obtained in scanning electron microscopy (SEM) by detecting a large flux of secondary electrons produced by the focused keV electron beam. Similar systems have not been widely used on nuclear microprobes due to ion beam intensity fluctuations, which limit the minimum resolvable contrast and present a major limitation for this technique. This paper describes a secondary electron imaging system which has been developed on the Lisbon microprobe. It is based on a scintillator, a photomultiplier operated in a pulsed mode, a pulse shaping electronic chain and ADC, and requires no changes to the existing data acquisition system. Examples of the images obtained from materials such as patterned SiGe wafers and hydrogen-implanted silicon are given, and compared with SEM or optical images.

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