A perpendicular graphene/ferromagnet electrode for spintronics

H Naganuma,F Godel,A Sander,V Zatko,C Carrétéro,N Reyren,M Galbiati,P Seneor,O Bezencenet,B Dlubak,M.-B Martin

doi:10.1063/1.5143567

Abstract

We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits. An L10 FePd ordered alloy showing both high magneto-crystalline anisotropy and a low magnetic damping constant, is deposited by magnetron sputtering. The graphene layer is then grown on top of it by large-scale chemical vapor deposition. A step-by-step study, including structural and magnetic analyses by x-ray diffraction and Kerr microscopy, shows that the measured FePd properties are preserved after the graphene deposition process. This scheme provides a graphene protected perpendicular spin electrode showing resistance to oxidation, atomic flatness, stable crystallinity, and perpendicular magnetic properties. This, in turn, opens the way to the generalization of hybrid 2D-materials on optimized PMA platforms, sustaining the development of spintronics circuits based on perpendicular spin-sources as required, for instance, for perpendicular-magnetic random-access memory schemes.

Highlights

Spintronics is seen as one of the main contenders for postCMOS approaches, with strong potential for spin logics[4,5] and beyond that, for instance, for stochastic calculations,[6,7,8] neuromorphic low power artificial intelligence,[9] and quantum computing.[10,11] These applications are promoting and sustaining the emergence of innovative spintronics material platforms to further scale spin circuits, increasing their performances and bringing generation functionalities
We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits
The PMA L10 FePd ordered alloy is grown on SrTiO3 substrates by radio frequency magnetron sputtering, and consecutively graphene (Gr) is formed on top by a chemical vapor deposition (CVD) step (Fig. 1)

Summary

Introduction

Spintronics is seen as one of the main contenders for postCMOS approaches, with strong potential for spin logics[4,5] and beyond that, for instance, for stochastic calculations,[6,7,8] neuromorphic low power artificial intelligence,[9] and quantum computing.[10,11] These applications are promoting and sustaining the emergence of innovative spintronics material platforms to further scale spin circuits, increasing their performances and bringing generation functionalities. We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits.

Results

Conclusion