A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Bich-Yen Nguyen,Philippe Flatresse,Christophe Maleville,Jamie Schaeffer,Manuel Sellier,Souhir Mhira,Vincent Huart,Olivier Weber,Franck Arnaud

doi:10.1109/mssc.2018.2867405

A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Bich-Yen Nguyen, Philippe Flatresse + Show 7 more

https://doi.org/10.1109/mssc.2018.2867405

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Journal: IEEE Solid-State Circuits Magazine	Publication Date: Jan 1, 2018
Citations: 18

Affiliation: Soitec (France), National Polytechnic Institute of Toulouse, Grenoble Institute of Technology, The University of Texas at Austin, STMicroelectronics (France), Aix-Marseille University

#Fully Depleted Silicon-on-Insulator #Fully Depleted Silicon-on-Insulator Technology + Show 8 more

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Abstract

Fully depleted silicon-on-insulator (FD-SOI) devices built on an ultrathin SOI layer on a buried-oxide (BOX) substrate feature unique performance capabilities and are suitable for full-range body biasing. FD-SOI technology has been adopted for multiple technology nodes and a wide range of current and upcoming microelectronic market segments, especially in the Internet of Things (IoT), wearable electronics, artificial intelligence (AI), and automotive applications, where ultralow power and reliability are required.

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