Abstract
AbstractFlexible photodetectors (FPDs) are emerging as essential components for next‐generation wearable optoelectronic devices, bendable imaging sensors, and implantable optoelectronics. However, the development of high‐performance FPDs hinges on the identification of innovative material systems that combine excellent optoelectronic properties, efficient charge transport, and scalable processing techniques. In this study, these challenges by introducing a novel hybrid paper‐based photodetector featuring a 2D MoS₂/N‐doped Graphene Quantum Dot (N‐GQD)/CsPbBr₃ quantum dot triple junction are addressed. This architecture is fabricated entirely through cost‐effective and easily scalable solution‐based methods, emphasizing the practicality of large‐scale production. The incorporation of N‐GQDs as an intermediate layer between MoS₂ nanoflowers and CsPbBr₃ QDs significantly enhances carrier transport and separation, leading to outstanding device performance. The materials and fabricated device are characterized by X‐ray diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, UV–vis and Photoluminescence spectroscopy, and Ultra Violet photoelectron spectroscopy. The photodetector exhibits a remarkable responsivity of 0.458 A W−1 and a specific detectivity of 3.28 × 10¹¹ Jones, highlighting its potential for high‐sensitivity applications. These results underscore the originality of the triple‐junction design and its significance as a versatile, economical platform for advancing flexible and large‐area photodetectors, paving the way for their deployment in wearable optoelectronics and expanded photo communication technologies.
Published Version
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