A novel X‐band CMOS asymmetric T/R switch with high‐pass TX arm and low‐pass RX arm

Abstract

AbstractIn this work, a novel asymmetric T/R switch is proposed. The operating principle and design equations of the proposed T/R switch topology are presented. Based on the proposed circuit topology, an X‐band asymmetric T/R switch is designed in 0.18‐µm CMOS. From 9 to 11 GHz, the measured isolation is higher than 32 dB and the measured insertion loss is less than 1.87 dB for the TX mode. At 10 GHz, the measured TX‐mode is higher than 36 dBm.