A novel wrap-gate-controlled single electron transistor formed on an InGaAs ridge quantum wire grown by selective MBE

Abstract

An attempt was made, for the first time, to fabricate a novel Schottky wrap gate (WPG) controlled single electron transistor (SET) directly on to an InGaAs stereographic ridge quantum wire grown by molecular beam epitaxy (MBE). To analyze the controllability of the quantum dot by Schottky WPG, a computer simulation of potential distribution was carried out. The fabricated SET showed clear conductance oscillation with an effective Coulomb gap of 10 meV. Comparison of the observed experimental behavior with simulation indicates that the SET is in the quantum confinement regime with resonant tunneling.