Abstract
A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is proposed. The threshold voltage shift (ΔVT) of the drive TFT caused by electrical stress is compensated by an incremental gate-to-source voltage (ΔVGS) generated by utilizing the ΔVT-dependent charge transfer from the drive TFT to a TFT-based metal-insulator-semiconductor (MIS) capacitor. A second MIS capacitor is used to inject positive charge to the gate of the drive TFT to improve the OLED drive current. The non-ideality of the ΔVT-compensation, TFT overlap capacitance, programming speed, and OLED degradation are discussed. The effectiveness of the proposed pixel circuit is verified by simulation results.
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