Abstract
A curvature corrected band gap reference (BGR) capable of generating sub-1-V output in standard CMOS process is proposed. It has the advantage over the prior arts in terms of accuracy of output voltage over wide temperature range while input supply voltage can undergo a large variation from 3 V to 1.5 V. Curvature correction of this BGR was done in a unique way by utilizing the temperature dependence of the base current in bipolar junction transistor (BJT). Stability of output voltage over wide range of supply voltage was ensured by using an improved self-biased amplifier. Spectre simulation of the proposed circuit showed that the output reference voltage at 716 mV has a temperature coefficient less than or equal to 2.7 ppm°C over-55°C to 125°C. Line regulation of the output reference voltage is less than 0.028% per Volt while supply voltage varies from 3 V to 1.5 V. Compatibility of proposed band gap at different technologies was confirmed by simulating the circuit in 0.18a#x03BC; and 0.22a#x03BC; CMOS process.
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