Year-end Sale % OFF 
Abstract
Leakage mediated by GaN buffer traps is identified and studied using a novel characterization technique. Through back‐gating measurement, the effect of buffer trap states on the lateral leakage is determined by probing mesa‐isolated Ohmic pads. Time‐dependent leakage measurements are carried out to study the extent of the increase in buffer leakage due to the traps. It is observed that the mesa leakage is more prominent at very slow sweep rates and high substrate bias. The temperature‐dependent measurements show that the mesa leakage and the substrate leakage are characterized by thermionic emission from the traps with an activation barrier of 0.34 and 0.2 eV, respectively.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
