Abstract
A new method is presented here to experimentally decompose capacitance transients into the appropriate components from the closely-spaced deep trap states. Using the Temperature Dependent Pulsewidth-DLTS (TDP-DLTS) technique, we show that two closely-spaced DX centers in Se-doped Al 0.6Ga 0.4As laser diodes can be successfully separated. We produce an Arrhenius plot for each individual component, which yield the thermal activation energies, emission rates and capture cross sections of the two closely spaced traps. Without any complicated mathematics or program, TDP-DLTS provides an accurate, convenient and consistent method for decomposing the multiexponential transients of DLTS spectra.
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