Abstract
Amorphous fluoropolymer (AF) thin film (0.9–1 μm), which has no-pinhole and uniform surface and numerous pores in the matrix, has been prepared from a solution of Teflon AF 1600 by a spin-coating method. Thermal annealing at 400°C for 30 min does not cause obvious deterioration of the film surface morphology. The mechanism for the formation of the film with a novel structure is discussed. By capacitance–voltage ( C– V) and current–voltage ( I– V) measurements, the electricity properties of the AF film are defined. The substitution of SiO 2 ( k=4.0) with the AF film ( k=1.57) will decrease the resistance–capacitance (RC) delay by about 61%.
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