A Novel Self-Controlled Double Trench Gate Snapback Free Reverse-Conducting IGBT With a Built-in Trench Barrier Diode

Abstract

A novel double gate snap-back free reverse-conducting insulated-gate bipolar transistor (RC-IGBT) is proposed in this article, which merges a trench field stop IGBT and a trench barrier diode in a monolithic device. The backside n-channel works at weak inversion mode in forward conduction state and can be automatically turned into strong inversion mode in the reverse conduction state. Therefore, bidirectional conduction capability with snapback free characteristics is achieved in the novel RC-IGBT. Performance comparison with conventional RC-IGBT is carried out based on Sentaurus device simulations, the results show that the novel RC-IGBT device in this article exhibits excellent overall performance in both IGBT and diode modes, the reverse recovery performance is significantly improved owing to the topside trench barrier structure and backside self-controlled carrier injection, compared to the conventional RC-IGBT, the proposed device demonstrates 32% lower ${I}_{\text {rrm}}$ and 63% lower ${t}_{\text {rr}}$ .