Abstract
In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.
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