A novel selenization technique for fabrication of superconducting FeSe x thin film

Abstract

A combinative method with reactive sputtering deposition and selenization technique was applied to prepare superconducting FeSe x films on LaAlO 3 substrates successfully. The influence of selenizing temperature on film components was studied. FeSe 0.96 and FeSe films had similar and good performances in transport measurement but little difference in magnetic property. The critical onset temperature got to 11.2 K and T c,0 got to 4 K approximately. X-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy were used to analyze the ratio of constituents and morphology of several selenized films. FeSe x film had a porous structure on surface and no well preferred orientation, which were confirmed to have little influence on superconducting properties.