A Novel Segmented LDMOS-SCR Structure With 8-kV HBM ESD Robustness in CMOS Analog Multiplexer

Abstract

A novel segmented laterally diffused MOS embedded silicon-controlled rectifier (SCR) structure, called NSLDMOS-SCR, is proposed and verified in an optimal 5-V/40-V bipolar CMOS DMOS (BCD) process. Superior to the strip LDMOS-SCR, the proposed NSLDMOS-SCR exhibits a high holding voltage of 20.6 V and an excellent failure current of 12.2 A in a width of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$200~\mu \text{m}$ </tex-math></inline-formula> , benefitting from the widened segmented topology of the source and body. As such, for ±15-V circuit application, the NSLDMOS-SCR can fit the electrostatic discharge (ESD) design window for an eight-channel CMOS analog multiplexer and effectively protect these pins against 8-kV human-body-mode ESD stress.