Abstract
A novel bonding process using Ag agglomerates paste prepared by Ag2O reduction has been proposed, which solved the problem of Cu substrate oxidation in the conventional Ag2O sintering process for Cu–Cu bonding. By applying the Ag agglomerate paste to Ag–Ag bonding, a shear strength of 28.3 MPa at 150 °C was obtained. Further studies showed that the optimum sintering temperature was at 225 °C, and a shear strength of 46.4 MPa was obtained. In addition, a shear strength of 20 MPa was obtained at 225 °C for Cu–Cu bonding. Compared to common Ag pastes, the results in this paper revealed that the sintering behavior of Ag agglomerates was unique, and the sintering mechanisms for Ag–Ag and Cu–Cu bonding were also discussed.
Highlights
Third-generation semiconductors, such as gallium nitride and silicon carbide, are characterized by high pressure, high frequency and high temperature compared to silicon, and have been widely used in the fields of rail transit, industrial control, automotive electronics and photovoltaic power generation [1,2]
It is worth mentioning that the surface of the Ag2 O microparticle was completely covered with a layer of Ag nanoparticles, as shown in Figure 2b, and the average diameter of the nanoparticles was around 10 nm
The surface energy of the tiny-sized Ag nanoparticles is theoretically extremely high, the diffusion rate between them was slow at a low temperature, resulting in the formation of a small amount of larger Ag nanoparticles
Summary
Third-generation semiconductors, such as gallium nitride and silicon carbide, are characterized by high pressure, high frequency and high temperature compared to silicon, and have been widely used in the fields of rail transit, industrial control, automotive electronics and photovoltaic power generation [1,2]. With the increasing in power density of devices, the requirement of reliability in packaging technology becomes harsher. A large number of studies for the use of metallic nanoparticles as bonding materials, such as silver and copper, have demonstrated their great potential in high-temperature packaging technologies in the future [6,7,8,9]. It is known that the apparent melting point of metallic particles becomes much lower than that of their bulk material as the size decreases to several nanometers [10]. While the melting points of sintering layers will approach that of bulk materials once the connection between the nanoparticles has formed [11,12,13]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
