Abstract
A novel p-type lateral extended drain MOS (pLEDMOS) based on an SOI substrate has been presented for plasma display panels scan driver IC. By introducing a reversed doped high-voltage-Nwell that fabricated by the special SOI process, both the current capability and off-state breakdown voltage (BV) of the device are optimized well. The saturation current density over 0.6 mA µm−1 and the BV over 210 V for the novel pLEDMOS are achieved by using a 0.5 µm SOI CMOS process. Moreover, the hot-carrier degradation has also been improved compared with the conventional device.
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