A novel nanoscale‐crossbar resistive switching memory using a copper chemical displacement technique

Abstract

Nanoscale‐crossbar electrochemical‐metallization (ECM) type resistive‐switching random access memory (ReRAM) is considered promising candidates for next‐generation non‐volatile memory. However, performing nanoscale patterning with traditional Cu‐based ECM ReRAM is quite challenging, because Cu is difficult to control and pattern using lithography and etching. In this study, a nanoscale Cu‐based ReRAM with a Si3N4–SiO2 bi‐layer was fabricated successfully through a novel Cu chemical displacement technique (Cu‐CDT). Compared with other conventional Cu deposition techniques, the Cu‐CDT exhibits numerous advantages including simplicity, low‐temperature fabrication, low cost, and high displacement selectivity between poly‐Si and the Si3N4–SiO2 bi‐layer. Moreover, the developed nanoscale‐crossbar Cu‐CDT ReRAM device demonstrated stable switching and remarkable high‐temperature data retention. Therefore, the Cu‐CDT is an effective approach for overcoming Cu etching and patterning limitations.