Abstract
A novel Nano-scale scalable multi-finger RF MOSFET model extraction method is presented in this paper. First, Parasitic resistances induced by measuring probe are analyzed, according to which the extraction method of parasitic probe resistor are proposed. Secondly, it is proved that stress effects on the MOS channel scale with finger number. Moreover, Based on experiment data, it is concluded that several MOS instances, finger numbers, channel width and length highly affect the parasitic source and drain resistance of Multi-finger MOS. An empirical scalable model on them has been suggested. A complete flow of model parameters extraction and optimization on nano-scale multi-finger MOSFET is presented.
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