Abstract

The study takes into account the diffusion of photo-excited carriers in the presence of a laser pulse and theoretically investigates photoacoustic wave propagation in the thermoelastic domain. In a nonlocality medium, the phenomena of thermomechanical and acoustic wave interaction are considered. Thermoelasticity, photothermal, and photoacoustic theories provide the controlling formulas. Photoacoustic waves are not dependent on electron–phonon or electron–hole thermalization processes; rather, they are produced by thermoelastic stress resulting from the temperature increase induced by the laser. The optical, elastic, and thermoelastic characteristics of nanoscale semiconductor materials are taken into account and photoacoustic signals are predicted by solving a thermal diffusion issue and a thermoelastic problem in combination. The mathematical model can be solved using the harmonic wave approach. By obtaining numerical solutions, all the physical fields of the physical domain, such as thermal, acoustic, mechanical, and carrier density diffusion, as well as displacements and temperatures, can be derived. The influences of nonlocal parameters, thermal delay, and laser pulse effect are investigated and compared using two- and three-dimensional visual representations, corresponding to two-dimensions and three-dimensions domains, respectively.

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