Abstract
The wet etching properties of GaAs in NH4OH–H2O2–H2O mixed solutions were investigated, and a fabrication method for producing released GaAs microstructures with a rectangular cross section using a (001) GaAs substrate was developed. To obtain the wet etching properties with respect to the crystallographic orientations, the etch rates and cross sectional etch profiles of (001) GaAs with 16 different compositions were measured. Based on the experimental data, a novel GaAs micromachining method in bulk (001) GaAs is proposed. In this proposed method, anisotropic wet etch, sidewall passivation, and wet undercut etch steps are performed, in order to release the <100> beams with a rectangular cross section. This proposed micromachining method is used to fabricate a released microbridge with a rectangular cross section. The developed GaAs micromachining method will be very useful for low loss, highly-tunable capacitors for RF components.
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