Abstract

In this research, we investigate wet-etching properties of GaAs in NH4OH-H2O2-H2O and develop a novel bulk micromachining process for fabricating released micro-structures using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and undercut rates of (001) GaAs are measured using various compositions of NH4OH-H2O2-H2O mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is developed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

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