Abstract
Ga profile is a critical design in CIGS thin film solar cells to enhance device performance. Many techniques have been exploited to determine Ga profiles including secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), Raman depth profiling and Energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM-EDX) etc. These techniques, when considering deployment in a manufacturing environment, are either time-consuming or expensive. Herein, a novel method is developed in this work to obtain Ga profiles by analyzing the Ga nanodots formed on CIGS cross-section under Focused Ion Beam (FIB) modification. A model of the formation of the Ga nanodots has been established and a mathematical method has been developed to process their depth distribution. Good agreement has been reached between the developed method and AES measurement. This method provides the fast-growing CIGS industry a fast, precise and cost-effective way to determine Ga profiles to realize process monitoring.
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