Abstract
We propose an alternate method to sense inertial rotation using semiconductor ring laser gyroscope (SRLG). We show that inertial rotation causes change in the magnitude of voltage across the terminals of semiconductor gain medium which can be measured externally to determine angular rotation velocity. The resonant oscillating frequency of the counter-traveling waves are not involved in the measurement which leads to elimination of lock-in in the gyro. The mathematical analysis and simulation results of the proposed method are also shown.
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