Abstract

Quantitative electrical analysis of sub-cells is crucial for the designing of high-efficiency GaAs multi-junction laser power converters (MJLPCs). However, finding suitable bias lights to separate the electrical performance of sub-cells is an enormous challenge, due to GaAs MJLPCs being assembled by GaAs p-n junctions. Therefore, this study proposes a novel and general method of determining bias lights for the SR measurement of GaAs MJLPCs based on the variation rules of simulated short-circuit current densities with wavelengths in the sub-cells of GaAs MJLPCs. By the method of determining bias lights, the external quantum efficiency (EQE) curves of a GaAs four-junction LPC have been successfully measured for the first time, which confirms the validity of the method.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call