A novel H-plane filter using double-layer substrate integrated waveguide with defected ground structures

Abstract

The novel double layer substrate integrated waveguide (SIW) technology is used for realisation of conventional H-plane filter, which is manufactured in waveguide. This proposed filter is totally realised in double layer dielectric substrate with metallic vias and fabricated using a standard printed circuit board (PCB) process. In previous studies, prototypes of E-plane and H-plane filter were designed and fabricated in standard waveguides. The H-plane type of those two has the same frequency response as that of the E-plane type, while its cross section is one-quarter. Similarly, the SIW H-plane filter, which is presented in this article, has the same dispersion characteristics as that of waveguide filter while its dimensions are very shorter. Moreover, by using a sandwich model of double layer SIW, the interleaved metal vane is fabricated between two substrates easily. We can also improve the frequency response of the SIW H-plane filter using defected ground structure (DGS). Therefore, in DGS SIW H-plane filter, which is presented, the return loss and insertion loss in passband are less than conventional H-plane filter. The improvement of the spurious response is the other trait of DGS SIW H-plane filter.